MnO Altermagnet leads the next-generation semiconductor revolution
A domestic research team has presented a groundbreaking turning point in the development of next-generation semiconductor materials. The research team of Professor Hong Ji-sang of Pukyong National University has confirmed ferroelectric properties and spintronics device application possibilities in an altered magnet material using manganese oxide (MnO). This study theoretically elucidated the high-efficiency ferroelectric properties with … Read more